cystech electronics corp. spec. no. : c304j3 issued date : 2010.12.06 revised date : 2012.05.16 page no. : 1/7 BTD5213J3 cystek product specification general purpose npn epitaxial planar transistor BTD5213J3 features ? low collector saturation voltage ? high breakdown voltage, v ceo =80v (min.) ? high collector current, i c(max) =1a (dc) ? pb-free lead plating package symbol outline to-252(dpak) BTD5213J3 b base c collector e emitter b c e absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5 v collector current (dc) i c 1 a collector current (pulse) i cp 2 (note) a power dissipation @ t a =25 c 1 w p d power dissipation @ t c =25 c 10 w operating junction and storage temp erature range tj ; tstg -55~+150 c note : pulse test, p w 10ms, duty 50%.
cystech electronics corp. spec. no. : c304j3 issued date : 2010.12.06 revised date : 2012.05.16 page no. : 2/7 BTD5213J3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 12.5 c/w thermal resistance, junction-to-ambient, max r th,j-a 125 c/w characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 100 - - v i c =50 a bv ceo 80 - - v i c =1ma bv ebo 5 - - v i e =50 a i cbo - - 1 a v cb =80v, i e =0 i ebo - - 1 a v eb =4v, i c =0 *v ce(sat) - 0.15 0.4 v i c =500ma, i b =20ma *h fe 160 - 400 - v ce =5v, i c =100ma f t - 100 - mhz v ce =10v, i c =50ma, f=100mhz cob - 20 - pf v cb =10v, i e =0a, f=1mhz *pulse test: pulse width 380 s, duty cycle 2% ordering information device package shipping BTD5213J3-0-t3-g to-252 (pb-free lead plating an d halogen-free package) 2500 pcs / tape & reel
cystech electronics corp. spec. no. : c304j3 issued date : 2010.12.06 revised date : 2012.05.16 page no. : 3/7 BTD5213J3 cystek product specification typical characteristics current gain vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) current gain--- hfe hfe@vce=2v hfe@vce=3v saturation voltage vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=20ib vbesat@ic=20ib on voltage vs collector current 100 1000 1 10 100 1000 collector current---ic(ma) on voltage---(mv) vbe(on)@vce=2v transition frequency vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) transition frequency---ft(mhz) capacitance characteristics 1 10 100 0.1 1 10 100 collector base voltage-- vcb(v) capacitance---cob(pf) f=1mhz power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 175 200 ambient temperature---ta() power dissipation---pd(w)
cystech electronics corp. spec. no. : c304j3 issued date : 2010.12.06 revised date : 2012.05.16 page no. : 4/7 BTD5213J3 cystek product specification typical characteristics(cont.) power derating curve 0 2 4 6 8 10 12 0 25 50 75 100 125 150 175 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c304j3 issued date : 2010.12.06 revised date : 2012.05.16 page no. : 5/7 BTD5213J3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c304j3 issued date : 2010.12.06 revised date : 2012.05.16 page no. : 6/7 BTD5213J3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c304j3 issued date : 2010.12.06 revised date : 2012.05.16 page no. : 7/7 BTD5213J3 cystek product specification to-252 dimension inches millimeters inches millimeters dim min. max. min. max. marking: style: pin 1.base 2.collector 3.emitter 4.collector 3-lead to-252 plastic surface mount package cystek package code: j3 device name date code d5213 1 2 3 4 dim min. max. min. max. a 0.087 0.094 2.200 2.400 e 0.086 0.094 2.186 2.386 a1 0.000 0.005 0.000 0.127 e1 0.172 0.188 4.372 4.772 b 0.039 0.048 0.990 1.210 h 0.163 ref 4.140 ref b 0.026 0.034 0.660 0.860 k 0.190 ref 4.830 ref b1 0.026 0.034 0.660 0.860 l 0.386 0.409 9.800 10.400 c 0.018 0.023 0.460 0.580 l1 0.114 ref 2.900 ref c1 0.018 0.023 0.460 0.580 l2 0.055 0.067 1.400 1.700 d 0.256 0.264 6.500 6.700 l3 0.024 0.039 0.600 1.000 d1 0.201 0.215 5.100 5.460 p 0.026 ref 0.650 ref e 0.236 0.244 6.000 6.200 v 0.211 ref 5.350 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead : pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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